1 item symbol ratings unit remarks drain-source voltage v ds 280 v dsx 280 continuous drain current i d 56 pulsed drain current i d(puls] 224 gate-source voltage v gs 30 maximum avalanche current i ar 56 non-repetitive e as 1039.1 maximum avalanche energy repetitive e ar 21 maximum avalanche energy maximum drain-source dv/dt dv ds /dt 20 peak diode recovery dv/dt dv/dt 5 max. power dissipation p d 210 3.13 operating and storage t ch +150 temperature range t stg electrical characteristics (t c =25c unless otherwise specified) thermal characteristics 2SK3874-01R fuji power mosfet maximum ratings and characteristic absolute maximum ratings (tc=25c unless otherwise specified) item symbol test conditions zero gate voltage drain current i dss v ds =280v v gs =0v v ds =224v v gs =0v v gs =30v i d =28a v gs =10v i d =28a v ds =25v v cc =180v i d =28a v gs =10v r gs =10 ? min. typ. max. units v v a na m ? s pf nc v ns c ns min. typ. max. units thermal resistance r th(ch-c) channel to case r th(ch-a) channel to ambient 0.595 40.0 c/w c/w symbol bv dss v gs(th) i gss r ds(on) g fs c iss c oss c rss td (on) t r td (off) t f q g q gs q gd v sd t rr q rr item drain-source breakdown voltage gate threshold voltage gate-source leakage current drain-source on-state resistance forward transconductance input capacitance output capacitance reverse transfer capacitance turn-on time t on turn-off time t off total gate charge gate-source charge gate-drain charge diode forward on-voltage reverse recovery time reverse recovery charge test conditions i d = 250 a v gs =0v i d = 250 a v ds =v gs t ch =25c t ch =125c v ds =0v v ds =75v v gs =0v f=1mhz v cc =140v i d =56a v gs =10v i f =56a v gs =0v t ch =25c i f =56a v gs =0v -di/dt=100a/s t ch =25c v v a a v a mj mj kv/s kv/s w c c 280 3.0 5.0 25 250 100 51 61 12 24 3600 5400 530 795 35 52.5 40 60 58 87 80 120 10 15 80 120 30 45 25 38 1.20 1.50 400 4.5 -55 to +150 outline drawings (mm) www.fujielectric.co.jp/fdt/scd super f ap-g series n-channel silicon power mosfet equivalent circuit schematic 200406 v gs =-30v note *1 note *2 note *3 v ds 280v note *4 tc=25c ta=25c = < note *1:tch 150c,repetitive and non-repetitive note *2:startingtch=25c,i as =23a,l=3.37mh, v cc =48v,r g =50 ? e as limited by maximum channel temperature and avalanche current. see to the ?avalanche energy? graph note *3:repetitive rating:pulse width limited by maximum channel temperature. see to the ?transient thermal impedance? graph. note *4:i f -i d , -di/dt=50a/s,v cc bv dss ,tch 150c features high speed switching low on-resistance no secondary breakdown low driving power avalanche-proof applications switching regulators dc-dc converters ups (uninterruptible power supply) gate(g) source(s) drain(d) = < = < = < = <
2 characteristics 2SK3874-01R fuji power mosfet 0 25 50 75 100 125 150 0 50 100 150 200 250 300 allowable power dissipation pd=f(tc) pd [w] tc [ c] 012345678910 0 10 20 30 40 50 60 70 80 90 100 7v 20v 10v 8v 6.5v vgs=6.0v id [a] vds [v] typical output characteristics id=f(vds):80 s pulse test,tch=25 c 012345678910 0.1 1 10 100 id[a] vgs[v] typical transfer characteristic id=f(vgs):80 s pulse test,vds=25v,tch=25 c 0.1 1 10 100 0.1 1 10 100 gfs [s] id [a] typical transconductance gfs=f(id):80 s pulse test,vds=25v,tch=25 c 0 102030405060708090100 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.12 0.13 0.14 8v rds(on) [ ? ] id [a] typical drain-source on-state resistance rds(on)=f(id):80 s pulse test,tch=25 c 10v 20v 7v 6.5v vgs=6v -50 -25 0 25 50 75 100 125 150 0.000 0.025 0.050 0.075 0.100 0.125 0.150 0.175 0.200 rds(on) [ ? ] tch [ c] typ. max. drain-source on-state resistance rds(on)=f(tch):id=28a,vgs=10v
3 2SK3874-01R fuji power mosfet -50-25 0 255075100125150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. gate threshold voltage vs. tch vgs(th)=f(tch):vds=vgs,id=250 a vgs(th) [v] tch [ c] 0 102030405060708090100110120130140 0 2 4 6 8 10 12 14 qg [nc] typical gate charge characteristics vgs=f(qg):id=56a,tch=25 c vgs [v] 224v 140v vcc= 56v 10 -1 10 0 10 1 10 2 10 3 10 0 10 1 10 2 10 3 10 4 c [pf] vds [v] typical capacitance c=f(vds):vgs=0v,f=1mhz crss coss ciss 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.1 1 10 100 if [a] vsd [v] typical forward characteristics of reverse diode if=f(vsd):80 s pulse test,tch=25 c 10 -1 10 0 10 1 10 2 10 3 10 0 10 1 10 2 10 3 10 4 typical switching characteristics vs. id t=f(id):vcc=180v,vgs=10v,rg=10 ? td(on) tr tf td(off) t [ns] id [a] 0 25 50 75 100 125 150 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 i as =23a i as =34a i as =56a eav [mj] starting tch [ c] maximum avalanche energy vs. starting tch e(av)=f(starting tch):vcc=48v,i(av)<=56a
4 2SK3874-01R fuji power mosfet http://www .fujielectric.co.jp/fdt/scd/ 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -2 10 -1 10 0 10 1 10 2 single pulse maximum avalanche current pulsewidth i av =f(t av ):starting tch=25 c,vcc=48v avalanche current i av [a] t av [sec] 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 10 1 maximum transient thermal impedance zth(ch-c)=f(t):d=0 zth(ch-c) [c/w] t [sec]
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